 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode IXFN 280N07 VDSS ID25 D RDS(on) t rr = = = < 70 V 280 A 5 m 250 ns Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C, Chip capability Terminal current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 2 PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL 1 mA t = 1 min t=1s TC = 25C G S S Maximum Ratings 70 70 20 30 280 100 1120 180 60 3 5 V V V V A A A A mJ J V/ns miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source Features 600 -55 ... +150 150 -55 ... +150 2500 3000 W C C C V~ V~ *International standard packages *miniBLOC, with Aluminium nitride isolation *Low RDS (on) HDMOSTM process *Rugged polysilicon gate cell structure *Unclamped Inductive Switching (UIS) *Low package inductance *Fast intrinsic Rectifier Applications * DC-DC converters rated Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 70 2.0 4.0 200 TJ = 25C TJ = 125C 100 2 V V nA A mA * Synchronous rectification * Battery chargers * Switched-mode and resonant-mode * DC choppers * Temperature and lighting controls * Low voltage relays power supplies VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 8 mA V GS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V V GS = 10 V, ID = 120A Pulse test, t 300 s, duty cycle d 2 % 5 m Advantages * Easy to mount * Space savings * High power density 98555B (1/02) (c) 2002 IXYS All rights reserved IXFN 280N07 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 60 90 9400 VGS = 0 V, VDS = 25 V, f = 1 MHz 4600 2550 65 VGS = 10 V, VDS = 0.5 * VDSS, ID = 90A RG = 1 (External), 90 140 55 420 VGS = 10 V, VDS, ID = 100A 65 220 0.22 0.05 S pF pF pF ns ns ns ns nC nC nC K/W K/W A B C D E F G H J K L M N O P Q R S T U miniBLOC, SOT-227 B gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 15 V; 60A, pulse test M4 screws (4x) supplied Dim. Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1 Inches Min. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 Max. 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004 Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 280 1120 1.3 200 1.2 10 A A V ns C A IF = 100A, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 50A, -di/dt = 100 A/s VR = 50V TJ = 25C IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
Price & Availability of IXFN280N07
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |